Résumé
This work introduces an innovative approach for estimating the Single-Event Upset (SEU) cross-sections in Static Random-Access Memory (SRAM) devices, addressing challenges related to limited technological information and the complexity of Technology Computer-Aided Design (TCAD) simulations. The proposed methodology is designed to be accessible even to users without in-depth TCAD expertise, enabling a streamlined yet accurate SEU cross-section estimation. Using simplified mixed-modeling (TCAD-based 2D modeling with circuit-level SPICE simulations), this approach significantly reduces computational efforts while maintaining good correlation with experimental data. Furthermore, this study identifies key parameters that influence TCAD modeling accuracy and proposes strategies for approximating unknown parameters, enhancing the reliability of SEU cross-section predictions.