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Room temperature operation of InAs/AlSb quantum cascade lasers
Journal article   Peer reviewed

Room temperature operation of InAs/AlSb quantum cascade lasers

R. Teissier, D. Barate, A. Vicet, C. Alibert, A. N. Baranov, X. Marcadet, C. Renard, M. Garcia, C. Sirtori, D. G. Revin, …
Applied Physics Letters, Vol.85(2)
07/2004
DOI: https://doi.org/10.1063/1.1768306

Abstract

waveguide lasers surface plasmons semiconductor growth current density indium compounds aluminium compounds III-V semiconductors quantum cascade lasers molecular beam epitaxial growth
The room temperature operation of InAs/AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5 μm operate in pulse regime up to 300 K. The threshold current density of 3.18-mm-long lasers is 1.5 kA/cm2 at 83 K and 9 kA/cm2 at 300 K.
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