Résumé
An all-epitaxial monolithic vertical cavity surface emitting laser grown on GaSb substrate is presented. The structure is composed of two n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and a tunnel junction. Quasi continuous-wave laser operation is demonstrated at 2.3 mu m up to room temperature. Threshold current densities of 0.8kA/cm super( 2) and 0.6 kA/cm super( 2) are obtained at 300 K and 280 K for 80 mu m-diameter devices (1 mu s pulses, 10% duty cycle). A peak output optical power of 2 mW was achieved at 280 K.