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Room-temperature Terahertz Emission from Nanometer Field Effect Transistors
Journal article   Peer reviewed

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, Michel Dyakonov, A. El Fatimy, J. Lusakowski, W. Knap, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, …
Applied Physics Letters, Vol.88(14)
2006
DOI: https://doi.org/10.1063/1.2191421

Abstract

ndium compounds aluminium compounds gallium compounds gallium arsenide III-V semiconductors wide band gap semiconductors high electron mobility transistors submillimetre wave transistors submillimetre wave generation PACS: 85.30.Tv 84.40.-x 85.30.Tv – 84.40.-x
Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 µW.
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