- Title
- Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs
- Creators - without role
- Konstantinos RogdakisEdwige Bano - Los Angeles Harbor CollegeLaurent Montès - Los Angeles Harbor CollegeMikhael Bechelany - Université Claude Bernard Lyon 1David Cornu - Université de Montpellier, Institut Européen des Membranes - IEMKonstantinos Zekentes - Foundation for Research and Technology Hellas
- Publication Details
- IEEE Transactions on Nanotechnology, Vol.10(5), pp.980 - 984
- Identifiers
- 9944317009311
- Academic Unit
- Institut Européen des Membranes - IEM
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01695785
Journal article
Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs
IEEE Transactions on Nanotechnology, Vol.10(5), pp.980 - 984
09/2011
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