- Title
- Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels
- Creators - without role
- P. Shiktorov - Semiconductor Physics Institute (Vilnius)E. Starikov - Semiconductor Physics Institute (Vilnius)V. Gružinskis - Semiconductor Physics Institute (Vilnius)L. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IESG. Sabatini - Université de Montpellier, Institut d'Electronique et des Systèmes - IESH. Marinchio - Université de Montpellier, Institut d'Electronique et des Systèmes - IESL. Reggiani - Istituto Nazionale per la Fisica della Materia
- Publication Details
- Journal of Statistical Mechanics: Theory and Experiment, Vol.2009(01)
- Identifiers
- 9945852409311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-02443131
Journal article
Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels
Journal of Statistical Mechanics: Theory and Experiment, Vol.2009(01)
01/01/2009
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