Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Journal article

Peer reviewed

F. Ravotti, M. Glaser, Frédéric Saigné, L. Dusseau and Gérard Sarrabayrouse

Applied Physics Letters, Vol.89(8), pp.083503.1-083503.3

2006

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Title: Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment
Creators - without role: F. Ravotti - European Organization for Nuclear Research
M. Glaser - European Organization for Nuclear Research
Frédéric Saigné - Centre National de la Recherche Scientifique
L. Dusseau - Université de Montpellier
Gérard Sarrabayrouse - Laboratoire d'Analyse et d'Architecture des Systèmes
Publication Details: Applied Physics Letters, Vol.89(8), pp.083503.1-083503.3
Identifiers: 9940684309311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00328198