Résumé
In a previous paper, a method was proposed to predict the thermal annealing of irradiated devices from a single experimental isochronal curve. In this paper, the method is applied to four different power MOSFETs. It is shown that for one of the devices the method can not be applied, whereas for the other three devices, the one-year isothermal behavior is predicted with good accuracy. The predicted and experimental isothermal curves are compared for temperatures of 60/spl deg/C and 90/spl deg/C. The range of validity of this method is discussed.