Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements

Journal article

Peer reviewed

L. Dusseau, T. Randolph, R. Schrimpf, F. Galloway, Frédéric Saigné, J. Fesquet, J. Gasiot and R. Ecoffet

Journal of Applied Physics, Vol.81(5), pp.2437 - 2441

03/1997

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Title: Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements
Creators - without role: L. Dusseau - University of Arizona
T. Randolph - University of Arizona
R. Schrimpf - University of Arizona
F. Galloway
Frédéric Saigné - Université de Montpellier
J. Fesquet - Université de Montpellier
J. Gasiot - Université de Montpellier
R. Ecoffet - Centre National d'Études Spatiales
Publication Details: Journal of Applied Physics, Vol.81(5), pp.2437 - 2441
Identifiers: 9946462409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-01801548