Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

M. Adell; L. Ilver; J. Kanski; V. Stanciu; P. Svedlindh; J. Sadowski; Jz Domagala; Ferial Terki; C. Hernandez; Salam Charar

doi:10.1063/1.1875746

Retour

Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

Article de revue

Avec comité de lecture

Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

M. Adell, L. Ilver, J. Kanski, V. Stanciu, P. Svedlindh, J. Sadowski, Jz Domagala, Ferial Terki, C. Hernandez et Salam Charar

Applied Physics Letters, Vol.86

2005

DOI: https://doi.org/10.1063/1.1875746

Résumé

CURIE-TEMPERATURE

GA1-XMNXAS

(GA

MN)AS

EPILAYERS

In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials. (C) 2005 American Institute of Physics.

Fichiers et liens (1)

url

Find in HALAfficher

Indicateurs

1 Consultations de la notice

Détails

Titre: Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
Créateurs - sans rôle: M. Adell - MAX IV Laboratory
L. Ilver - MAX IV Laboratory
J. Kanski - Lund University
V. Stanciu - Uppsala University
P. Svedlindh - Uppsala University
J. Sadowski - Polish Academy of Sciences
Jz Domagala - Polish Academy of Sciences
Ferial Terki - Université de Montpellier
C. Hernandez - Université de Montpellier
Salam Charar - Université de Montpellier
Détails de publication: Applied Physics Letters, Vol.86
Identifiants: 99151655809311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Journal article
Champs locaux: hal-00549879