Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m

Journal article

Peer reviewed

Kamel Merghem, R. Teissier, G. Aubin, A. Monakhov, A. Ramdane and A. N. Baranov

Applied Physics Letters, Vol.107(11)

14/09/2015

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Title: Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m
Creators - without role: Kamel Merghem - 3S Photonics
R. Teissier - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
G. Aubin - 3S Photonics
A. Monakhov - Ioffe Institute
A. Ramdane - 3S Photonics
A. N. Baranov - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Publication Details: Applied Physics Letters, Vol.107(11)
Identifiers: 9942271209311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-01626270