Résumé
The surface topography of GaxIn1−xAs and InAs layers grown by solid-source molecular-beam epitaxy on (311)-InP and (311)-GaAs substrates, respectively, is investigated in situ by reflection high-energy electron diffraction. In a wide temperature range, the (311)-GaxIn1−xAs surfaces are corrugated on a nanometer scale in a way similar to that previously reported for (311)-GaAs surfaces [R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett. 67, 3812 (1991)]. Moreover, the period of the corrugations varies with the overlayer strain which we demonstrate to be the key parameter to control the surface topography.