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Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime
Article de revue scientifique

Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime

Andre Raymond, Sandrine Juillaguet, I. Elmezouar, W. Zawadzki, Ml Sadowski, M. Kamal-Saadi et B. Etienne
Semiconductor Science & Technology, Vol.14, p.915-920
1999

Résumé

CYCLOTRON-RESONANCE LINEWIDTH GAAS-GA1-XALXAS HETEROJUNCTIONS MAGNETIC-FIELDS QUANTUM LIMIT GAS GAAS MOBILITY SYSTEMS TEMPERATURES BEHAVIOR
Cyclotron resonance (CR) and quantum transport measurements are performed on three GaAs/Ga0.67Al0.33As heterostructures in the quantum Hall regime at T = 2 K. The relaxation time and the 2D electron density N-s are determined fitting the CR transmission curves by the Drude-type model. In all samples the density N-s exhibits oscillations as a function of magnetic field. The de quantum transport is also studied on the same structures and, assuming that the Hall resistance determines the electron density at all fields, one obtains density oscillations similar to those measured by CR. This density behaviour is modelled using a reservoir hypothesis.

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