Abstract
We report a detailed examination of the electronic structure and of the thermal transport in a graded-index separate-confinement heterostructure based on (Zn,Cd)Se wide-band-gap II-VI semiconductors, and designed in the view of a blue-green light emission device. The band offsets and strain state of the heterostructure are obtained from 2-K photoreflectance measurements. The temperature dependence of the photoluminescence spectra taken both in a resonant in-well excitation condition and in an above-barrier excitation condition has enabled us to quantify the mechanisms responsible for the photoluminescence thermal quenching. This has been done in the context of a sophisticated model that includes several nonradiative processes. In the 10-70 K temperature range, the photoluminescence intensity is found to be ruled by a nonradiative detrapping towards interfacial defects, whilst the thermal escape effect is responsible for the photoluminescence quenching at higher temperatures. In the case of an above barrier excitation condition, the contribution of the carriers diffusion from the barriers to the well leads to an increase of the quantum-well photoluminescence, the intensity of which exhibits a maximum around 50 K.