Abstract
We propose an overview of specific optical properties of quantum-size artificial structures made of group-III nitride semiconductors with natural wurtzite symmetry. We consider the cases of quantum wells and of quantum boxes obtained by the Stranski-Krastanov growth mode. We comment on results of continuous-wave and time-resolved optical spectroscopy, in comparison with our envelope-function calculations of excitonic energies and oscillator strengths. The influence on recombination dynamics of internal electric fields and carrier localization is discussed in detail.