Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas; Christou A.; Pierre Lefebvre; Jacques Allègre; K. Zekentes; G Halkias

doi:10.1063/1.107805

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Optical properties of InGaAs films embedded in plasma etched InP wells.

Journal article

Peer reviewed

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas, Christou A., Pierre Lefebvre, Jacques Allègre, K. Zekentes and G Halkias

Applied Physics Letters, Vol.61(7)

17/08/1992

DOI: https://doi.org/10.1063/1.107805

Abstract

The optical properties of InGaAs films grown in plasmaetchedInP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on nonpatterned InP substrates. The excitonic features of the photoluminescence spectra were maintained for the selectively grown well films.

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Title: Optical properties of InGaAs films embedded in plasma etched InP wells.
Creators - without role: A. Georgakilas - University of Maryland, College Park
Christou A. - Department of Electrical and Computer Engineering [Univ. of Maryland]
Pierre Lefebvre - Université de Montpellier
Jacques Allègre - Université de Montpellier
K. Zekentes - Foundation for Research and Technology Hellas
G Halkias - Foundation for Research and Technology Hellas
Publication Details: Applied Physics Letters, Vol.61(7)
Grant note: European Community - RACE (Research for Advanced Communications in Europe) Project 1027
Identifiers: 9945479909311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-01176049