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Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: Evidence of phonon-plasmon coupled modes
Article de revue   Avec comité de lecture

Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: Evidence of phonon-plasmon coupled modes

P Perlin, W Knap, T Taliercio, J Camassel, J L Robert, T Suski, Grzegory, J Jun, S Porowski et J C Chervin
SILICON CARBIDE AND RELATED MATERIALS 1995, Vol.142, pp.951-954
INSTITUTE OF PHYSICS CONFERENCE SERIES
01/01/1996

Résumé

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Condensed Matter Physics, Multidisciplinary Science & Technology Technology
We report a cross-correlated investigation of Raman scattering and infrared spectroscopy of bulk GaN. We have used different samples, with different (high) residual concentrations of free carriers, and report experimental results which are typical of coupled LO phonon-plasmon modes. Clearly this establishes both far infrared reflection and Raman scattering as powerful and non destructive tools to investigate the residual doping level of GaN samples up to about 10(20) cm(-3).

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