Optical anisotropy and polarization fields for wurtzite films deposited on (11(2)over-bar-n)- and (10(1)over-bar-p)-orientated GaN substrates

Bernard Gil; Pierre Bigenwald

doi:10.1016/j.spmi.2007.07.006

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Optical anisotropy and polarization fields for wurtzite films deposited on (11(2)over-bar-n)- and (10(1)over-bar-p)-orientated GaN substrates

Bernard Gil et Pierre Bigenwald

Superlattices and microstructures, Vol.43(5-6), pp.542-558

01/05/2008

DOI: https://doi.org/10.1016/j.spmi.2007.07.006

Résumé

Physical Sciences

Physics

Physics, Condensed Matter

Science & Technology

We analyse the optical properties of GaN homoepitaxies grown on semipolar (112n)- and (101p)-orientated GaN substrates. We find the optical anisotropy of the GaN films to be strictly ruled by the angle between the growth plane and the < 0001 > direction of the crystal. This anisotropy offers a wide range of applications in the domain of surface emitting devices like VCELs and cavity polariton lasers based on GaN but also for similar structures relying on ZnO-related materials. (C) 2007 Elsevier Ltd. All rights reserved.

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Titre: Optical anisotropy and polarization fields for wurtzite films deposited on (11(2)over-bar-n)- and (10(1)over-bar-p)-orientated GaN substrates
Créateurs - sans rôle: Bernard Gil - Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France
Pierre Bigenwald - Univ Blaise Pascal Clermont Ferrand II, LASMEA, F-63177 Clermont Ferrand, France
Détails de publication: Superlattices and microstructures, Vol.43(5-6), pp.542-558
Éditeur: Elsevier
Nombre de pages: 17
Identifiants: 99147397809311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Journal article