Abstract
Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.