Résumé
Thermal step method (TSM) is a non destructive technique which measures the distribution of electric field and the space charge density across a solid insulators. In this paper, we report the experimental results obtained by the Thermal step method (TSM) and The capacitive voltage (C-V) characterisations of the gallium nitride films grown by the Metal Organic Vapour Phase Epitaxy on silicon substrate. The C-V curves shows a MOS structure behaviours, this was attributed to the existence of an SiO2 insulator between silicon and GaN. Experimental results were in good accordance with TSM measurements. These where performed under different applied bias voltage, remnant saturation current indicate a sign inversion above -75 mV