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Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors
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Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors

A. Shchepetov, C. Gardes, Y. Roelens, A. Cappy, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, …
Applied physics letters, Vol.92(24), pp.242105-1-3
16/06/2008
DOI: https://doi.org/10.1063/1.2945286

Résumé

Physical Sciences Physics Physics, Applied Science & Technology
We report on the demonstration of narrow terahertz plasma wave resonant detection at low temperature in 200 nm gate length InGaAs/InAlAs multichannel high electron mobility transistors. We observe that the resonant detection linewidth is smaller than in full channel high electron mobility transistors. We interpret this shrinking by the effect of multichannel geometry that does not allow oblique plasma mode propagation along the channel. (C) 2008 American Institute of Physics.

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