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Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
Journal article   Open access   Peer reviewed

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

Taha Ayari, Suresh Sundaram, Chris Bishop, Adama Mballo, Phuong Vuong, Yacine Halfaya, Soufiane Karrakchou, Simon Gautier, Paul B Voss, Jean-Paul Salvestrini, …
Advanced Materials Technologies, Vol.4(10)
10/10/2019
DOI: https://doi.org/10.1002/admt.201970057

Abstract

h-BN heterogeneous integration III-nitrides pick-and-place
In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.
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