Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/ f noise

Article de revue

Luca Varani, Lino Reggiani, Vladimir Mitin, Carolyne van Vliet et Tilmann Kuhn

Physical review. B, Condensed matter and materials physics, Vol.48(7), pp.4405-4411

15/08/1993

PMID: 10008913

Résumé

Computational Physics

Condensed Matter

Electronics

Engineering Sciences

Materials Science

Physics

1 Consultations de la notice

Titre: Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/ f noise
Créateurs - sans rôle: Luca Varani - CNR-INFM and Dipartimento di Fisica, Università di Modena e Reggio Emilia
Lino Reggiani - Dipartimento di Ingegneria dell’Innovazione, Universita’ di Lecce and INFM
Vladimir Mitin
Carolyne van Vliet
Tilmann Kuhn
Détails de publication: Physical review. B, Condensed matter and materials physics, Vol.48(7), pp.4405-4411
Éditeur: American Physical Society
Nombre de pages: 7
Identifiants: 99162629109311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Journal article