Noise and electron diffusion in doped n -type GaAs at heating electric fields

Journal article

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R. Katilius, J. Liberis, A. Matulionis, R. Raguotis, P. Sakalas, J.-P. Nougier, J.-C. Vaissière, L. Varani and L. Rota

Physical Review B: Condensed Matter and Materials Physics (1998-2015), Vol.60(16), pp.11487-11493

10/1999

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Title: Noise and electron diffusion in doped n -type GaAs at heating electric fields
Creators - without role: R. Katilius - Lithuanian Academy of Sciences
J. Liberis - Lithuanian Academy of Sciences
A. Matulionis - Lithuanian Academy of Sciences
R. Raguotis - Lithuanian Academy of Sciences
P. Sakalas - Lithuanian Academy of Sciences
J.-P. Nougier - Université de Montpellier
J.-C. Vaissière - Université de Montpellier
L. Varani - Université de Montpellier
L. Rota - European Center for Computational Electronics
Publication Details: Physical Review B: Condensed Matter and Materials Physics (1998-2015), Vol.60(16), pp.11487-11493
Identifiers: 9944752709311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02394624