Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Alessio Griffoni; Jeroen van Duivenbode; Dimitri Linten; Eddy Simoen; Paolo Rech; Luigi Dilillo; Frédéric Wrobel; Patrick Verbist; Guido Groeseneken

doi:10.1109/TNS.2011.2180924

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Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Journal article

Peer reviewed

Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Alessio Griffoni, Jeroen van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, Luigi Dilillo, Frédéric Wrobel, Patrick Verbist and Guido Groeseneken

IEEE Transactions on Nuclear Science, Vol.59(4), pp.866-871

03/02/2012

DOI: https://doi.org/10.1109/TNS.2011.2180924

Abstract

single event gate rupture (SEGR)

single event burnout (SEB)

silicon carbide (SiC)

neutrons

super-junction

Insulated gate bipolar transistor (IGBT)

power MOSFET

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

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Title: Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs
Creators - without role: Alessio Griffoni - IMEC
Jeroen van Duivenbode - ASML (Netherlands)
Dimitri Linten - IMEC
Eddy Simoen - IMEC
Paolo Rech - Université de Montpellier, Laboratoire d'Informatique de Robotique et de Microélectronique de Mtp - LIRMM
Luigi Dilillo - Centre National de la Recherche Scientifique
Frédéric Wrobel - Université de Montpellier
Patrick Verbist - IMEC
Guido Groeseneken - KU Leuven
Publication Details: IEEE Transactions on Nuclear Science, Vol.59(4), pp.866-871
Identifiers: 9947766309311
Academic Unit: Institut d'Electronique et des Systèmes - IES; Laboratoire d'Informatique de Robotique et de Microélectronique de Mtp - LIRMM
Language: English
Resource Type: Journal article
Local Fields: lirmm-00805039