Résumé
Different metallisation schemes for the formation of n- type ohmic contact on type- II InAs/GaSb strained layer superlattice material are reported. The specific contact resistance of metal contacts was evaluated by the transfer length method. The Ge( 282 angstrom)/Au( 547 angstrom)/Ni(50 angstrom)/Pt(470 angstrom)/Au(2001 angstrom) contact yielded a specific contact resistance of 1.6 x 10(-5) Omega cm(2) ( rapid thermal anneal, 380 degrees C, 60 s).