Morphology and photoluminescence of anodically grown porous layers on some Ga-V compounds

R.A. Bendorius; V. Jasutis; J. Kavaliauskas; V. Pacebutas; J. Sabataityte; I. Simkiene; A. N. Baranov

doi:10.4028/www.scientific.net/MSF.384-385.67

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Morphology and photoluminescence of anodically grown porous layers on some Ga-V compounds

Journal article

Peer reviewed

Morphology and photoluminescence of anodically grown porous layers on some Ga-V compounds

R.A. Bendorius, V. Jasutis, J. Kavaliauskas, V. Pacebutas, J. Sabataityte, I. Simkiene and A. N. Baranov

Materials Science Forum, Vol.384-385, pp.67-70

2002

DOI: https://doi.org/10.4028/www.scientific.net/MSF.384-385.67

Abstract

Porous materials

III-V compound

Monocrystals

Photoluminescence

Anodic dissolution

Microstructure

Single crystalline p-type Ga-V (V=As, Sb) layers were made porous by anodical etching in fluorhydric acid solution. The morphology, chemical composition and optical properties of porous layers were investigated. Photoluminescence band in the visible range was explained by charge carrier quantum confinement in nanocrystalline particles of the initial material.

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Title: Morphology and photoluminescence of anodically grown porous layers on some Ga-V compounds
Creators - without role: R.A. Bendorius - Vilnius Gediminas Technical University
V. Jasutis - Institute of Semiconductor Physics
J. Kavaliauskas - Institute of Semiconductor Physics
V. Pacebutas - Institute of Semiconductor Physics
J. Sabataityte - Institute of Semiconductor Physics
I. Simkiene - Institute of Semiconductor Physics
A. N. Baranov - Centre d'Electronique et de Micro-optoélectronique de Montpellier
Publication Details: Materials Science Forum, Vol.384-385, pp.67-70
Identifiers: 9947056709311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00327073