Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

T. Mérelle; Frédéric Saigné; B. Sagnes; G. Gasiot; P. Roche; T. Carrière; M.-C. Palau; Frédéric Wrobel; J.-M. Palau

doi:10.1109/TNS.2005.855823

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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

Journal article

Peer reviewed

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

T. Mérelle, Frédéric Saigné, B. Sagnes, G. Gasiot, P. Roche, T. Carrière, M.-C. Palau, Frédéric Wrobel and J.-M. Palau

IEEE Transactions on Nuclear Science, Vol.52 (2)(5), pp.1538-1544

2005

DOI: https://doi.org/10.1109/TNS.2005.855823

Abstract

This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.

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Title: Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs
Creators - without role: T. Mérelle - Centre d'Electronique et de Micro-optoélectronique de Montpellier
Frédéric Saigné - Centre d'Electronique et de Micro-optoélectronique de Montpellier
B. Sagnes - Centre d'Electronique et de Micro-optoélectronique de Montpellier
G. Gasiot - STMicroelectronics
P. Roche - Université de Montpellier
T. Carrière - EADS, Corporate Research Center
M.-C. Palau - Centre d'Electronique et de Micro-optoélectronique de Montpellier
Frédéric Wrobel - LPES - Laboratoire de Physique Electronique des Solides, EA 1174
J.-M. Palau - Centre d'Electronique et de Micro-optoélectronique de Montpellier
Publication Details: IEEE Transactions on Nuclear Science, Vol.52 (2)(5), pp.1538-1544
Identifiers: 9946045709311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00328657