Résumé
To qualify the feasibility of standard semiconductor materials and Schottky-barrier diodes (SBDs) for THz high-order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal-to-noise ratio are calculated by the Monte Carlo method when a periodic high-frequency large-amplitude external signal is applied to a semiconductor device. Due to very high signal-to-noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials.