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Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN
Journal article   Peer reviewed

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN

E. Starikov, V. Gruzinskis, P. Shiktorov, L. Reggiani, L. Varani, J.-C. Vaissière and C. Palermo
Semiconductor Science and Technology, Vol.vol. 20(no3), pp.pp. 279-285
2005

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