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Monte Carlo calculations of THz generation in nitrides
Journal article   Peer reviewed

Monte Carlo calculations of THz generation in nitrides

L. Varani, J.-C. Vaissière, E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani and J.H. Zhao
Physica Status Solidi A (applications and materials science), Vol.190(1), pp.247-256
2002

Abstract

Optical phonons Digital simulation Monte Carlo methods Inorganic compounds Gallium nitrides Semiconductor materials Mechanical strength Liquid state Microwave field Transit time Negative differential conductivity Electric field effects Binary compounds Indium nitrides Impurity states
The high-frequency generation associated with the optical-phonon transit-time resonance in a constant electric field is analyzed by Monte Carlo simulations of different nitrides such as InN, GaN and AlN. Calculations show that the microwave power generation occurs in a wide frequency range covering practically the whole submillimeter range and persisting in the THz frequency range up to the liquid nitrogen temperature.
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