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Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's
Journal article   Peer reviewed

Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's

T. Gonzalez, D. Pardo, L. Varani and L. Reggiani
IEEE Transactions on Electron Devices, Vol.42(5), pp.991-998
05/1995
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