Abstract
We have grown GaInSbBi single layers and GaInSbBi/GaSb multi-quantum well (MQW) structures by Molecular Beam Epitaxy. We observed that the addition of In strongly modifies and reduces the Bi incorporation into GaSb. For an In concentration of ~3.7%, we reached a maximum Bi content of 10.5% while the highest Bi concentration falls down to 3% with 10% of In. Additionally, droplets appear at lower Bi composition than in GaSbBi alloys. Finally, the optical properties of GaInSbBi/GaSb MQW structures were characterized by photoluminescence spectroscopy at room-temperature. The longest emission wavelength observed was close to 2.6 µm for a composition of 10.5% and 3.7% of Bismuth and Indium respectively.