Abstract
This paper presents a new model for gate-to-channel GOS defects. The transistors used in digital cell library are usually designed wish a minimum-size. This new model permits to handle minimal-length transistors allowing the simulation of GOS defects in realistic digital circuits. Based on the electrical analysis of the defect behavior, a comprehensive method for the model construction is detailed. It is shown that the behavior of the proposed model matches in a satisfactory way the behavior of a defective transistor including the random parameters of the defect.