Abstract
We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (lambda(cut-off) similar to 4.3 mu m at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 x 10(-4) A cm(-2) and the maximum specific detectivity D* was estimated to 1.2 x 10(11) Jones (at 0 V). At 293 K, the zero-bias D* was found to be similar to 10(9) Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate.