Résumé
Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 µm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 µs, 5 %) operation was obtained at room temperature for 35 µm-diameter devices with threshold current of 85 mA.