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Microdosimetry of Very-High-Energy Heavy Ion Beams for Electronics Testing Using Silicon-on-Insulator Detectors
Article de revue   Avec comité de lecture

Microdosimetry of Very-High-Energy Heavy Ion Beams for Electronics Testing Using Silicon-on-Insulator Detectors

Andreas Waets, Natalia Emriskova, Ruben Garcia Alia, Karolina Klimek, Vladimir Pan, Anatoly Rosenfeld, Linh T. Tran, James Vohradsky, Angela Kok, Marco Povoli, …
IEEE transactions on nuclear science, Vol.72(8), pp.2513-2518
01/08/2025
DOI: https://doi.org/10.1109/TNS.2025.3550471

Résumé

Atmospheric measurements Atmospheric modeling CERN Detectors FLUKA Ion beams Ions linear energy transfer (LET) microdosimeter Microelectronics Monte Carlo simulations Particle measurements Silicon silicon-on-insulator (SOI) technology single event effects (SEEs) Space missions Testing very-high-energy (VHE) heavy ions
This article explores the use of microdosimetry with a silicon-on-insulator (SOI) detector for characterizing very-high-energy (VHE) heavy ion beams used specifically for single event effect (SEE) testing of electronics. The detector was deployed at CERN's heavy ion facility for radiation effects testing and exposed to lead ion beams in the 100-1000 MeV per nucleon kinetic energy range. The implications and possible benefits of using microdosimetry for SEE testing purposes are discussed.

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