MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar nN on sapphire substrate : Growth of Group III Nitrides

Article de revue

Avec comité de lecture

Matthieu Moret, Sandra Ruffenach, Olivier Briot et Bernard Gil

Physica status solidi. A, Applications and materials science, Vol.208(5), pp.1183-1186

2011

Résumé

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Iii-v semiconductors

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of specific thin films

Physics

Structure and morphology; thickness

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

Vapor phase epitaxy; growth from vapor phase

1 Consultations de la notice

Titre: MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar nN on sapphire substrate : Growth of Group III Nitrides
Créateurs - sans rôle: Matthieu Moret - GES, UMR 5650 CNRS, CC074, Place Eugene BataUIon, Universite MontpeUier II, 34095 MontpeHier, France
Sandra Ruffenach - GES, UMR 5650 CNRS, CC074, Place Eugene BataUIon, Universite MontpeUier II, 34095 MontpeHier, France
Olivier Briot - GES, UMR 5650 CNRS, CC074, Place Eugene BataUIon, Universite MontpeUier II, 34095 MontpeHier, France
Bernard Gil - GES, UMR 5650 CNRS, CC074, Place Eugene BataUIon, Universite MontpeUier II, 34095 MontpeHier, France
Détails de publication: Physica status solidi. A, Applications and materials science, Vol.208(5), pp.1183-1186
Éditeur: Wiley-VCH
Identifiants: 99147405309311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Journal article