Résumé
We present a detailed study of the crystalline, morphological, electrical and optical properties of GaInAsSb quaternary alloys grown by Molecular Beam Epitaxy (MBE) on GaSb substrate. The objective of this study is, on the one hand, to use the far-from- thermodynamic equilibrium specificity of MBE to grow compositions deep inside the miscibility gap, and to identify the range of compositions accessible for high-performance infrared devices. On the other hand, it enriches the knowledge on the InAs-rich GaInAsSb quaternary alloy that has been little studied until now.