- Title
- Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2
- Creators - without role
- Jiaying Jian - Northwestern Polytechnical UniversityHao FengPengfan Dong - Xi'an Technological UniversityHonglong Chang - Northwestern Polytechnical UniversityArnaud Vena - Université de MontpellierBrice Sorli - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
- Publication Details
- Advanced Electronic Materials
- Identifiers
- 9944595409311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-03553365
Journal article
Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2
Advanced Electronic Materials
30/12/2021
Metrics
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