Abstract
The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical external cavity surface emitting laser (VECSEL) emitting near 2.1 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM00 low-divergence laser operation is demonstrated in quasi-CW (10 μs pulses, 10% duty cycle) from 250 up to 350 K. A threshold as low as 390 W/cm2 at 250 K combined with a T0 around 33 K has been measured.