Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

A. Salhi; Y. Rouillard; A. Pérona; P. Grech; M. Garcia; C. Sirtori

doi:10.1088/0268-1242/19/2/024

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Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

Journal article

Peer reviewed

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

A. Salhi, Y. Rouillard, A. Pérona, P. Grech, M. Garcia and C. Sirtori

Semiconductor Science and Technology, Vol.19(2), pp.260-262

2004

DOI: https://doi.org/10.1088/0268-1242/19/2/024

Abstract

Experimental study

Inorganic compounds

Continuous wave

Current density

Threshold current

Laser radiation

Quantum wells

Semiconductor lasers

Aluminium antimonides

Indium antimonides

Arsenic Antimonides

Gallium antimonides

Quaternary compounds

Quantum yield

We report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm-2. A maximum output power of 540 mW at 293K in the continuous wave regime has been achieved.

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Title: Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm
Creators - without role: A. Salhi - Université de Montpellier
Y. Rouillard - Centre National de la Recherche Scientifique
A. Pérona - Université de Montpellier
P. Grech - Université de Montpellier
M. Garcia - Thales
C. Sirtori - Thales
Publication Details: Semiconductor Science and Technology, Vol.19(2), pp.260-262
Identifiers: 9942210409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00329918