Résumé
Low frequency reverse current noise is studied for the first time in InAsSbP/InAs double heterostructure (DH) photodiodes in the frequency range 1 Hz–104 Hz at 300 K and 100 K. At room temperature, the noise in the DH photodiodes is 1/f and might be significantly lower (by ∼17 dB) than in single heterostructure InAsSbP/InAs photodiodes. In the practically most important regime of low reverse currents, Irb, the current dependence of spectral noise density is proportional to both at 300 K and 100 K. The reverse current noise might provide the limit for the detectivity of DH photodiodes at Irb > 3 × 10−6 A at 300 K and Irb > 8 × 10−9 A at 100 K.