Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Journal article

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Peer reviewed

N. Dyakonova, S Karandashev, M Levinshtein, B Matveev and M Remennyi

Semiconductor Science and Technology, Vol.33(6)

01/06/2018

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Title: Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes
Creators - without role: N. Dyakonova - Université de Montpellier, Laboratoire Charles Coulomb - L2C
S Karandashev - Ioffe Institute
M Levinshtein - Ioffe Institute
B Matveev - Ioffe Institute
M Remennyi - Ioffe Institute
Publication Details: Semiconductor Science and Technology, Vol.33(6)
Identifiers: 9940861309311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-01818780