Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

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N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev and M.A. Remennyi

Infrared Physics and Technology, Vol.111

12/2020

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Title: Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias
Creators - without role: N. Dyakonova - Université de Montpellier, Laboratoire Charles Coulomb - L2C
S.A. Karandashev - Ioffe Institute
M.E. Levinshtein - Ioffe Institute
B.A. Matveev - Ioffe Institute
M.A. Remennyi - Ioffe Institute
Publication Details: Infrared Physics and Technology, Vol.111
Identifiers: 9938355409311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-03151345