Résumé
In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 mu m. Finally, we discuss the progress towards intersubband light emitters, including the first experimental observation of intersubband photoluminescence in nitride nanostructures.