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Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices
Journal article   Open access   Peer reviewed

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

P. Shiktorov, E. Starikov, V. Gruzinskis, T. Gonzalez, J. Mateos, D. Pardo, L. Reggiani, L. Varani and J.-C. Vaissière
VLSI Design, Vol.13(1-4), pp.85-90
2001

Abstract

Fluctuations Impedance Gallium arsenide Schottky diodes Noise level High definition video Voltage Physics Modems Electronics packaging Semiconductor device models Semiconductor device noise Langevin force Generalized transfer field Electronic noise Deep submicron device Standard impedance field method Hydrodynamic model
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https://doi.org/10.1155/2001/82542View
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