Abstract
We use the resistance fluctuations (RFs) appearing in the integer quantum Hall regime to scan the density of states of a very thin Hall bar. By applying a dc voltage on a top gate, we analyze the correlation properties of the various resistances as a function of the magnetic field and the carrier density. In the gate voltage-magnetic field plane, these RFs follow lines with slopes quantized in unit of filling factor and the slope of these RFs depends on their correlation properties.