Abstract
In deep nano-scale and high-integration CMOS technologies, storage circuits have become increasingly sensitive to charge-sharing-induced multiple-node-upsets (MNUs) that include double, triple and quadruple node-upsets. Currently, verifications for error-recovery of existing latches highly rely on EDA tools with complex error-injection combinations. In this paper, a latch design protected against MNUs in harsh radiation as well as an algorithm-based verification process are proposed. Due to the constructed redundant feedback loops, the latch can completely recover from any MNU. Algorithm-based verification and simulations both demonstrate the MNU recovery of the proposed latch. Simulation results demonstrate the low area overhead of the proposed latch compared with the only one existing of the same type.