Résumé
We present a model for kinetic Monte Carlo simulations of antiphase domain burial during GaAs growth on (001) Si by molecular beam epitaxy. The model shows that both anisotropic nearest-neighbor binding and anisotropic diffusion of Ga atoms play key roles in the burial process. Diffusion of Ga atoms is found to be faster in the [110] direction, which generates a current of adatoms that flows from the antiphase domains to the main phase domains. This creates a growth rate imbalance between the two phases, leading to the progressive burial of the antiphase domains. The temperature dependence of the model is shown to be compatible with experimental results of the literature.